Method and apparatus for dry processing of substrates
US4687544A · kind A · utility
66Cited by
6References
22Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 14, 1986 |
| Grant date | Aug 18, 1987 |
| Priority date | — |
| Expiry date | Apr 14, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for dry processing of a substrate is provided. More particularly, a substrate is exposed to a gas, such as an effluent from a gas plasma, having at least one reactive specie, such as a free radical, the gas having substantially no electrically charged particles present. Simultaneously, the substrate is irradiated with ultraviolet radiation to enhance the reaction rate in a controlled manner. Also provided is a means for irradiating the wafer with infrared radiation to heat the wafer independently of the irradiation with ultraviolet radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.