Electrophotographic photoconductor having a photosensitive layer of amorphous silicon carbonitride
US4687723A · kind A · utility
10Cited by
4References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 17, 1985 |
| Grant date | Aug 18, 1987 |
| Priority date | — |
| Expiry date | Dec 17, 2005 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/14704
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An electrophotographic photoconductor is disclosed, which comprises a support material, an intermediate layer, a photosensitive layer and a surface protection layer for protecting the photosensitive layer, which are successively overlaid on the support material, and the photosensitive layer comprises an amorphous silicon carbon nitride containing at least hydrogen or halogen having the formula of a-Si:C:N(H.X), where X represents halogen, or an amorphous silicon carbon nitride of the formula of a-Si:C:N:O(H.X) (where X represents halogen) which contains at least hydrogen or halogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.