Photoreceptor for electrophotography comprising boron doped a-Si.sub.1-x N.sub.x :H:F
US4687724A · kind A · utility
1Cited by
3References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 14, 1983 |
| Grant date | Aug 18, 1987 |
| Priority date | — |
| Expiry date | Dec 14, 2003 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/08221
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photoreceptor for electrophotography utilizing a-Si:N:H:F, wherein a stable high-sensitive layer is provided and the time-lapse variation in characteristics is reduced in the use of an a-Si.sub.1-x N.sub.x layer as a sensitive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.