Method for fabricating vertical MOSFETs
US4688323A · kind A · utility
8Cited by
15References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 1985 |
| Grant date | Aug 25, 1987 |
| Priority date | — |
| Expiry date | Oct 31, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
Abstract
A method for fabrication a vertical MOSFET which contains a protective element for protecting the gate electrode of an insulated gate field effect transistor. The protective element is formed of the same semiconductor layer as that of the gate electrode of the insulated gate field effect transistor and is formed integrally with the gate electrode on an insulating film formed on the surface of a semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.