Compensation doping of group III-V materials
US4689094A · kind A · utility
11Cited by
10References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 24, 1985 |
| Grant date | Aug 25, 1987 |
| Priority date | — |
| Expiry date | Dec 24, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of growing an epitaxial doped chromium buffer layer is described. A first flow of arsenic trichloride and hydrogen is directed through a retort having disposed therein at an elevated temperature chromium and gallium arsenide crystals. The arsenic trichloride reacts with the chromium and the gallium arsenic crystals to produce chromium chloride, gallium chloride and arsenic. This vapor stream is then directed into a reactor tube where a second flow of gallium chloride and arsenic is provided. Deposited from these flows is gallium arsenide doped with chromium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.