Photovoltaic device
US4689438A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 1985 |
| Grant date | Aug 25, 1987 |
| Priority date | — |
| Expiry date | Oct 16, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
The photovoltaic device of this invention has a p-type layer of oxides of the platinum group between a transparent electrode layer texturized at the side opposite the light incident surface and a semiconductive layer having a semiconductor junction and including a p-type layer at the light incident side thereof. With such a construction, the optical path length of an incident ray is increased, thereby improving the photoelectric conversion efficiency. Also, since the p-type semiconductive layer contacts the p-type layer of oxides of the platinum group, imperfections in the semiconductor junction can be reduced. Accordingly, with a photovoltaic device of this invention, the peak value of the photoelectric conversion efficiency can be increased and also the manufacturing yield can be remarkably increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.