Method for making Schottky diode having limited area self-aligned guard ring

US4691435A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Narasipur G. Anantha · Hopewell Junction, US
• Harsaran S. Bhatia · Beacon, US
• Santosh P. Gaur · Wappingers Falls, US
• John L. Mauer, IV · Sherman, US

Key dates

• Filing date: May 13, 1981
• Grant date: Sep 8, 1987
• Expiry date: May 13, 2001

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D8/60

Abstract

A method is disclosed for fabricating a small area, self aligned guard ring in a Schottky barrier diode. A vertically-walled hole is anisotropically etched completely through a dielectric layer on a silicon substrate. A layer of doped polycrystalline silicon is deposited over the apertured dielectric layer. The polycrystalline silicon is reactively ion etched away to leave only a lining about the perimeter of the hole in the dielectric layer. The structure is heated to diffuse the dopant from the lining into the substrate. Schottky diode metal is deposited on the substrate exposed through the lined aperture in the dielectric layer.