Dielectric ceramics
US4692421A · kind A · utility
1Cited by
2References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 21, 1986 |
| Grant date | Sep 8, 1987 |
| Priority date | — |
| Expiry date | Feb 21, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01P7/10
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Dielectric ceramics represented by the following general formula and substantially having the K.sub.2 NiF.sub.4 type crystal structure, EQU aSrO.bCaO.cTiO.sub.2.dSnO.sub.2 (wherein 0.39.ltoreq.a.ltoreq.0.70, 0.ltoreq.b.ltoreq.0.28, 0.27.ltoreq.c.ltoreq.0.35, 0.ltoreq.d.ltoreq.0.04, and a+b+c+d=1), have a high dielectric constant and an unloaded Q as high as 6000 and more in the high-frequency region of super high frequency band, and are therefore best suited for use in dielectric resonators, dielectric substrates for micro wave integrated circuit, and the like.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.