Semiconductor device with electrostatic discharge protection
US4692781A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 6, 1984 |
| Grant date | Sep 8, 1987 |
| Priority date | — |
| Expiry date | Jun 6, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/601
Abstract
An input protection circuit for an MOS device uses a thick-oxide transistor connected as a diode between a metal bonding pad and ground. The channel width of this transistor is chosen to be sufficient to withstand large, short-duration current spikes caused by electrostatic discharge. More important, the spacing between a metal-to-silicon contact to the drain of this transistor and the channel of the transistor (where heat is generated), is chosen to be much larger than usual so the metal of the contact will not be melted by heat propagating along the silicon surface during the current spike due to ESD. This spacing feature also applies to circuits for output pads, or circuits using diode protection devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.