Propagational control for Vertical Bloch Line memories
US4692899A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 12, 1985 |
| Grant date | Sep 8, 1987 |
| Priority date | — |
| Expiry date | Dec 12, 2005 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C19/0841
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Stabilization of the propagation of storage bits around the storage loops of a Vertical Bloch Line (VBL) memory is obtained by the vapor-deposition of a nickel-iron film over the VBL structure. The film has a composition range of 65-90% nickel and a thickness of 1,000 to 10,000 Angstroms, and is deposited in a vacuum of 10.sup.-4 to 10.sup.-6 Torr to provide parallel, periodic, magnetic stripe domains, and thus potential well domains, that have a periodicity in the range of 0.1 to 1 micron. The stripe domains are oriented perpendicular to the direction of data propagation and form potential wells along the elongated direction of the storage loops.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.