Method of depositing a silicon dioxide film
US4693916A · kind A · utility
14Cited by
1References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 7, 1986 |
| Grant date | Sep 15, 1987 |
| Priority date | — |
| Expiry date | Jul 7, 2006 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C2/04
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of depositing a silicon dioxide film by bringing a substrate into contact with a hydrosilicofluoric acid solution supersaturated with silicon dioxide by the addition of an additive to deposit silicon dioxide film on the surface of the substrate, wherein the additive is at least one compound selected from the group consisting of an aluminum compound, a calcium compound, a magnesium compound, a barium compound, a nickel compound, a cobalt compound, a zinc compound, and a copper compound, and/or a metal or metals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.