Planar light-emitting diode
US4694311A · kind A · utility
4Cited by
10References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 11, 1986 |
| Grant date | Sep 15, 1987 |
| Priority date | — |
| Expiry date | Sep 11, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8162
Abstract
A light-emitting diode, and corresponding method for its fabrication, in which a blocking layer is used for current confinement, and a rectangular light emission pattern is employed, to avoid an isotropic effects when material systems such as indium phosphide are used. A critical step in the method of the invention is etching an opening through the blocking layer. The opening has its sides precisely oriented at forty-five degrees with respect to the cleavage planes of the substrate, to avoid exposing any crystal planes that are anisotropic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.