Method for manufacturing programmable read-only memory containing cells formed with opposing diodes
US4694566A · kind A · utility
5Cited by
11References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 19, 1985 |
| Grant date | Sep 22, 1987 |
| Priority date | — |
| Expiry date | Jul 19, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B20/25
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor PROM containing a group of PROM cells (12) each consisting of a pair of opposing diodes oriented vertically with their common intermediate region (22) fully adjoining a recessed oxide insulating region (16) is fabricated by a process in which the insulating region serves as a mask to control the lateral extents of the dopants utilized to define the diodes. The intermediate cell regions are ion implanted to obtain maximum dopant concentration near their mid-points. This facilitates programming operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.