Hetero-augmentation of semiconductor materials
US4695331A · kind A · utility
25Cited by
4References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 6, 1985 |
| Grant date | Sep 22, 1987 |
| Priority date | — |
| Expiry date | May 6, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Hetero-augmentation of semiconductor materials by reacting a mixture of (1) a gaseous precursor of a host semiconductor with (2) a gaseous compound of the host and a hetero atom. The host precursor is a semiconductor hydride or a mixture of hydrides, including those of silicon and germanium. The compound of the host and hetero-atom includes a silyl or germyl dopant or alloyant. Suitable dopants are phosphorous, arsenic, and nitrogen. Suitable alloyants are other semiconductors and nitrogen. The reaction can take place pyrolytically, by electrical discharge, or photochemically.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.