Method of making a semiconductor laser CRT

US4695332A · kind A · utility

Assignee

• American Telephone and Telegraph Company, AT&T Bell Laboratories · US

Inventors

• Eugene I. Gordon · Madison, US
• Uri Levy · Rehovot, IL

Key dates

• Filing date: May 28, 1985
• Grant date: Sep 22, 1987
• Expiry date: May 28, 2005

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S148/095
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Room temperature laser action is achieved in a cathode ray tube (CRT) in which the target includes a plurality of semiconductor layers: a thin, wide bandgap buffer layer; a thicker, narrow bandgap active layer; and a much thicker wide bandgap cavity-length-adjusting layer. The light beam direction is essentially parallel to the e-beam direction and hence is scannable.