Gate structure for an integrated circuit comprising elements of the gate-insulator-semiconductor type and a method of fabrication of an integrated circuit using said structure
US4695860A · kind A · utility
5Cited by
2References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 12, 1983 |
| Grant date | Sep 22, 1987 |
| Priority date | — |
| Expiry date | Sep 12, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/15
Abstract
A gate structure for integrated circuits and more especially for photosensitive charge-transfer devices comprises elements of the gate-insulator-semiconductor type. The gate structure is constituted by a thin film-layer of transparent or semi-transparent conductive material covered with a layer of compatible insulating material having a refractive index higher than 1.5.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.