Fabrication of Schottky barrier MOSFETS
US4696093A · kind A · utility
13Cited by
3References
4Claims
0Family size
Inventor
Key dates
| Filing date | Jun 9, 1986 |
| Grant date | Sep 29, 1987 |
| Priority date | — |
| Expiry date | Jun 9, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
Abstract
A method for fabricating MOSFET devices by a one mask, one etch process utilizing vacuum deposited chromium, silicon upon which is grown SiO.sub.2 and an anneal process. An optional optimizing ion implantation and activating anneal step is also disclosed, as are two, and three, mask and etch procedures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.