Process of manufactoring an indium antimonide photodiode
US4696094A · kind A · utility
5Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 30, 1984 |
| Grant date | Sep 29, 1987 |
| Priority date | — |
| Expiry date | Nov 30, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming indium antimonide photodiodes by ionic implantation of the S.sub.34.sup.+ isotope of sulphur on a p type indium antimonide substrate. These photodiodes may be readily coupled to an N channel charge transfer device which provides multiplexing of the photodiodes and readout of the charges.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.