Method of depositing wide bandgap amorphous semiconductor materials
US4696702A · kind A · utility
8Cited by
2References
8Claims
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Key dates
| Filing date | Nov 24, 1986 |
| Grant date | Sep 29, 1987 |
| Priority date | — |
| Expiry date | Nov 24, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/903
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of depositing wide bandgap p type amorphous semiconductor materials on a substrate without photosensitization by the decomposition of one or more higher order gaseous silanes in the presence of a p-type catalytic dopant at a temperature of about 200.degree. C. and a pressure in the range from about 1-50 Torr.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.