Method of fabrication of a control transistor for a flat-panel display screen
US4697331A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 1986 |
| Grant date | Oct 6, 1987 |
| Priority date | — |
| Expiry date | Aug 25, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of fabrication of a control transistor for a flat-panel display screen involves the following steps: PA0 deposition of conductive material such as ITO on a substrate; PA0 etching of electrodes in the conductive material; PA0 successive depositions of layers formed of metallic material followed by n-doped amorphous semiconductor material; PA0 etching of a column and a connecting element in contact with the electrode; PA0 successive depositions of layers formed of undoped amorphous semiconductor material followed by insulating material and then by metallic material; PA0 etching in the three layers which have just been deposited of a row which overlaps the column and the connecting element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.