Controlled isotropic doping of semiconductor materials
US4698104A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 1987 |
| Grant date | Oct 6, 1987 |
| Priority date | — |
| Expiry date | Mar 2, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/958
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of doping selected areas of semiconductor material in the fabrication of integrated circuit devices, including placing a semiconductor substrate in a glow discharge reactor, introducing reactant gases into the reactor, subjecting the reactant gases to a plasma discharge, depositing, upon the substrate, a dopant carrier layer comprising an amorphous semiconductor material having a predetermined dopant concentration, controlling the thickness of the dopant carrier layer, and driving the dopant atoms out of the amorphous semiconductor dopant carrier layer into the selected areas of the semiconductor substrate by means of a controlled elevated temperature anneal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.