Method for producing deep-etch, X-ray lithography masks

US4698285A · kind A · utility

Assignee

• Kernforschungszentrum Karlsruhe GmbH · DE

Inventors

• Wolfgang Ehrfeld · Karlsruhe, DE
• Asim Maner · Blankenloch, DE
• Dietrich Munchmeyer · Blankenloch, DE

Key dates

• Filing date: Aug 20, 1986
• Grant date: Oct 6, 1987
• Expiry date: Aug 20, 2006

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S430/168
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A method for producing a mask for deep-etch x-ray lithography in which the mask pattern of a thin-film mask having thin absorber structures is transferred by recopying with soft X-ray radiation to an X-ray resist layer whose layer thickness corresponds to the thickness of the absorber structures of the mask to be subsequently produced. Transfer errors during recopying are avoided by producing the thin-film mask directly on one side of a carrier membrane; applying a positive X-ray resist layer on the other side of the carrier membrane; irradiating the positive X-ray resist layer with approximately parallel X-ray radiation through the thin-film mask to produce irradiated portions in the positive X-ray resist layer; removing the irradiated portions of the positive X-ray resist layer to expose portions of the carrier membrane; electrolytically depositing elements having a high atomic number, e.g., heavy metals, onto the exposed portions of the carrier membrane, removing the remaining resist material and etching away the thin-film mask.