Molecular beam generator using thermal decomposition for manufacturing semiconductors by epitaxy
US4699083A · kind A · utility
10Cited by
1References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 25, 1985 |
| Grant date | Oct 13, 1987 |
| Priority date | — |
| Expiry date | Nov 25, 2005 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/40
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Arsine or phosphine are thermally decomposed to form a molecular beam of arsenic or phosphorous by using the inside surfaces of a thermal decomposition duct (11) made of quartz or of boron nitride and heated on the outside by radiation from a filament (30). Pierced internal partitions (6a, 6b, 6c, 6d) having successive circumferentially offset holes (6p, 6q, 6r, 6s) increase the decomposition surface area and prevent a molecule from passing through the duct along a straight line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.