Method and apparatus for dry processing of substrates
US4699689A · kind A · utility
68Cited by
4References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 31, 1986 |
| Grant date | Oct 13, 1987 |
| Priority date | — |
| Expiry date | Jan 31, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method is provided for removing photoresist from a substrate, wherein the method comprises producing a gas plasma from a gas mixture comprising oxygen, CF.sub.4, nitrogen, and hydrogen; substantially eliminating any electrically charged particles from the plasma to produce a plasma effluent; heating the substrate to a temperature in the range of from about 250 to 300 degrees Centigrade; exposing the substrate and photoresist thereon to the effluent while said temperature is maintained; and simultaneously with the exposure step, irradiating the substrate with collimated ultraviolet radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.