Semiconductor device
US4699801A · kind A · utility
15Cited by
9References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 26, 1986 |
| Grant date | Oct 13, 1987 |
| Priority date | — |
| Expiry date | Feb 26, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32051
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is produced in such a manner that light having a wavelength in a range of 400 to 1000 nm is irradiated on a substrate so as to excite bonding hand of a material gas into a vibrating condition, and a thin film is formed on the substrate in accordance with a chemical vapor deposition method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.