Sensitive magnetotransistor magnetic field sensor
US4700211A · kind A · utility
56Cited by
4References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 18, 1983 |
| Grant date | Oct 13, 1987 |
| Priority date | — |
| Expiry date | Jul 18, 2003 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R33/066
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A magnetic field sensor having a lateral bipolar magnetotransistor incorporating only a single emitter region and whose base region is incorporated as a well in the surface of a silicon substrate of the reverse material conduction type. The P/N junction of the base region with the silicon substrate is reverse biased by means of at least one secondary collector contact. The emitter region must be kept as shallow than 0.5 .mu.m or be so lowly doped with impurity atoms that its resistivity is greater than 100 ohms per square or both. The sensitivity of the magnetic field sensor is approximately 100%/Tesla.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.