Method of manufacture thin film transistor
US4700458A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 24, 1985 |
| Grant date | Oct 20, 1987 |
| Priority date | — |
| Expiry date | Sep 24, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/949
Abstract
A method for manufacturing thin-film transistor comprises steps of sequentially forming in laminar state a gate film, an insulating film and a conductive film having a transparent electrode film and an amorphous silicon film added with an impurity thereto on the top surface of glass substrate or layer; irradiating ultraviolet ray from the bottom surface side of the substrate to expose negative photoresist film on said conductive film and to etch the same; and forming an amorphous semiconductive film on the structure. In this manner, source and drain electrodes are respectively self-aligned with the gate electrode and contacted therewith through a semiconductive film and a low resistive and semiconductor film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.