Ion-implanted magnetic bubble device and a method of manufacturing the same
US4701385A · kind A · utility
5Cited by
2References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 12, 1984 |
| Grant date | Oct 20, 1987 |
| Priority date | — |
| Expiry date | Dec 12, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S428/90
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a magnetic bubble device, a strain layer formed on the surface of a magnetic bubble garnet film by ion-implantation is required to have anisotropy field of great strength in the in-plane direction for driving magnetic bubbles. For preventing the effective anisotropy field change from being decreased by heat treatment, ion species having large mass and projected standard deviation not greater than 1000 .ANG. are implanted. The ion species are preferably selected from He to Kr in the periodic table. The heat treatment is effected at a temperature in a range of 450.degree. C. to 900.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.