Sintered silicon carbide ceramic body of high electrical resistivity

US4701427A · kind A · utility

Assignee

• Stemcor Corporation · US

Inventors

• Wolfgang D. G. Boecker · Lewiston, US
• Laurence N. Hailey · Niagara Falls, US
• Carl H. McMurtry · Youngstown, US

Key dates

• Filing date: Oct 17, 1985
• Grant date: Oct 20, 1987
• Expiry date: Oct 17, 2005

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

Sintered silicon carbide body having a D.C. electrical resistivity of at least 10.sup.8 Ohm cm at 25.degree. C., a density of at least 2.95 g/cm.sup.3 is formed upon sintering in a nitrogenous atmosphere at a temperature of about 2250.degree. C. or greater, a shaped body composed essentially of carbon or carbon source material in amount sufficient to provide up to 2.5 percent uncombined carbon; from about 0.4 to about 2.0 percent boron carbide; up to 25 percent of temporary binder and a balance of silicon carbide which is predominantly alpha-phase. The shaped body may additionally include other sintering aids such as BN or Al without destruction of desired high electrical resistivity.