Exhaust gas sensor and process for producing same
US4701739A · kind A · utility
15Cited by
5References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 13, 1985 |
| Grant date | Oct 20, 1987 |
| Priority date | — |
| Expiry date | Mar 13, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49002
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An exhaust gas sensor including a compound ASnO.sub.3-.delta. wherein A is Ba, Ra, Sr or Ca to make use of the variation of resistance value of the compound. BaSnO.sub.3-.delta. and RaSnO.sub.3-.delta. are n-type semiconductors, while SrSnO.sub.3-.delta. and CaSnO.sub.3-.delta. exhibit the behavior of n-type semiconductors at the point of equivalence and the behavior of p-type semiconductors in the lean burn region. The compound ASnO.sub.3-.delta. is prepared by reacting an alkaline earth with SnO.sub.2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.