Patent · US Expired

Gate array type semiconductor integrated circuit device

US4701777A · kind A · utility

17Cited by
3References
2Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 30, 1986
Grant dateOct 20, 1987
Priority date
Expiry dateDec 30, 2006

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/907

Abstract

A gate array type semiconductor device including at least a plurality of basic cell arrays and diffusion regions for suppressing latchup in the basic cells forming the basic cell arrays. Each of the diffusion regions has a comb-shaped structure, i.e., wide tooth parts, narrow tooth parts, and a base part, formed as an integral structure. These parts partially surround each basic cell.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.