Light emitting chip and optical communication apparatus using the same
US4701927A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 25, 1985 |
| Grant date | Oct 20, 1987 |
| Priority date | — |
| Expiry date | Jan 25, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2222
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
This invention relates to a semiconductor laser of a buried-hetero structure. In this semiconductor laser, the side surfaces of an active layer are in contact with a plane having a stable state of interface. As a result, the threshold current value of this semiconductor laser is low, and a stable operation can be obtained without causing any kink (projection ) in the current-optical output characteristics. An optical communication system using this semiconductor layer has a low operating current, and can maintain high coupling efficiency with an optical fiber without the occurrence of noise, so that optical communication having high reliability is possible.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.