Ion implantation chamber purification method and apparatus
US4703183A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 5, 1985 |
| Grant date | Oct 27, 1987 |
| Priority date | — |
| Expiry date | Dec 5, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3002
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A process for computer-controlled cleaning of particulates from surfaces, in particular those of semiconductor wafers, which are in the volume of an ion-implantation chamber prior to the implantation of electrically active ions into the wafers. The process utilizes the wafer-holding disk, which carries the semiconductor wafers during implantation, to create a strong turbulence of gas within the end station volume of the ion implanter. This loosens particulates from interior surfaces of the end chamber. The airborne particulates are then evacuated from the chamber volume by a vacuum pump. A single sequence, consisting of air agitation followed by flushing and then filling, reduces the particulate count by an incremental amount; a series of such sequences results in the desired asymptotic reduction in particulate contamination.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.