Process for low temperature curing of sol-gel thin films
US4704299A · kind A · utility
36Cited by
10References
4Claims
0Family size
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Key dates
| Filing date | Nov 6, 1985 |
| Grant date | Nov 3, 1987 |
| Priority date | — |
| Expiry date | Nov 6, 2005 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C26/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for curing and densifying a sol-gel derived inorganic thin film at lower temperatures (between 10.degree. C. and 400.degree. C.) by applying the films to a substrate, drying the film at a low temperature, exposing the film to a low pressure plasma. The film may be an oxide (e.g. SiO.sub.2), nitride (e.g. Si.sub.3 N.sub.4), oxynitride (e.g. SiO.sub.x N.sub.y) or sulfide (e.g. GeS.sub.2).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.