Exposure of uniform fine pattern on photoresist
US4704348A · kind A · utility
78Cited by
3References
22Claims
0Family size
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Inventors
Key dates
| Filing date | Sep 25, 1985 |
| Grant date | Nov 3, 1987 |
| Priority date | — |
| Expiry date | Sep 25, 2005 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70866
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Exposure of fine patterns on a photoresist is carried out by controlling the humidity and temperature of a gas to be supplied to an exposure apparatus separate from the ambient atmosphere. Temperature of the atmosphere at least in the vicinity of a photoresist is controlled in a predetermined range and air or gas to be supplied to the exposure space is humidified to a desired degree. Water content in the photoresist is kept uniform and constant by the specially controlled atmosphere and enables uniform pattern width of the exposed fine pattern all over the photoresist surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.