Substrate for active matrix display
US4705358A · kind A · utility
30Cited by
2References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 10, 1985 |
| Grant date | Nov 10, 1987 |
| Priority date | — |
| Expiry date | Jun 10, 2005 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2202/103
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Insulated-gate-field-effect transistors are disposed on an insulating substrate as a matrix. Each gate electrode of the transistors is covered with each gate insulating film and semiconductor film acting as a channel of the transistors, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.