Carbon film oxidation for free-standing film formation
US4705659A · kind A · utility
58Cited by
11References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 7, 1986 |
| Grant date | Nov 10, 1987 |
| Priority date | — |
| Expiry date | Jul 7, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/546
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A process is disclosed for fabricating a free-standing thin or thick film structure. One embodiment of the process includes the steps of providing a substrate of a first refractory material, forming a layer of carbon on the substrate, and depositing a film of a second refractory material on top of the layer of carbon. This sandwich structure is heated in an oxidizing ambient to cause the oxidation of the carbon layer leaving the second refractory material as a free-standing film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.