Noncontact dynamic tester for integrated circuits
US4706018A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 1984 |
| Grant date | Nov 10, 1987 |
| Priority date | — |
| Expiry date | Nov 1, 2004 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/308
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Testing of integrated circuit process intermediates, such as wafers, dise or chips in various stages of production (test chips) is facilitated by a nonintrusive, noncontact dynamic testing technique, using a pulsed laser, with laser light modification to increase photon energy through conversion to shorter wavelength. The high energy laser light excites electron emissions to pass to the detection system as a composite function of applied light energy and of dynamic operation of the circuit; detecting those emissions by an adjacent detector requires no ohmic contacts or special circuitry on the integrated circuit chip or wafer. Photoelectron energy emitted from a test pad on the test chip is detected as a composite function of the instantaneous input voltage as processed on the test chip, in dynamic operation including improper operation due to fault. The pulse from the laser, as modified through light modification, the parameters of detection of bias voltages, and the distances involved in chip-grid-detector juxtaposition, provides emissions for detection of circuit voltages occurring on the test chip under dynamic conditions simulating actual or stressed operation, with high time …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.