Light emitting diode formed of a compound semiconductor material
US4706101A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 20, 1985 |
| Grant date | Nov 10, 1987 |
| Priority date | — |
| Expiry date | Aug 20, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/824
Abstract
A light emitting diode is disclosed which includes an N-GaAs substrate, a double hetero-junction structure obtained by forming an N-GaAlAs clad layer, a P-GaAs active layer and a P-GaAlAs clad layer on the substrate in that order, and a current narrowing structure obtained by selectively forming a contact metal on the P-GaAlAs clad layer in the double hetero-junction structure with the contact metal formed around the contact metal. In the light emitting diode so manufactured, the double hetero-junction structure is formed by a metal organic vapor deposition method. The N-GaAlAs clad layer is of a three-layer structure with one layer of a narrower forbidden band width sandwiched between the remaining two layers of a wider forbidden band width.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.