Method of manufacture for semiconductor accelerometer
US4706374A · kind A · utility
88Cited by
2References
9Claims
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Inventor
Key dates
| Filing date | Sep 27, 1985 |
| Grant date | Nov 17, 1987 |
| Priority date | — |
| Expiry date | Sep 27, 2005 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P2015/0828
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An improved method of manufacturing a semiconductor accelerometer having a cantilevered beam is shown. In the fabricating process a semiconductor substrate is divided into p-type regions and n-type regions. The substrate is immersed into an electrochemical solution with a cathode and a suitable voltage is applied. Certain portions of the substate are protected from the etching by the voltage such that the semiconductor substrate is etched to form the cantilevered beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.