Semiconductor gas sensor having thermally isolated site
US4706493A · kind A · utility
60Cited by
9References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 13, 1985 |
| Grant date | Nov 17, 1987 |
| Priority date | — |
| Expiry date | Dec 13, 2005 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/12
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A preferred semiconductor gas sensor of this invention features a gas interaction site comprising a gas sensitive semiconductor thin film and means for heating the film to an operative temperature. The thin film and heating means are carried upon a region of a substrate that is etched opposite the site to reduce the thickness of the region and thereby reduce heat flow from the region into a surrounding region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.