Single crystal thin films
US4707217A · kind A · utility
21Cited by
5References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 28, 1986 |
| Grant date | Nov 17, 1987 |
| Priority date | — |
| Expiry date | May 28, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/904
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A system and techniques are disclosed for forming single crystal films with the use of energy sources that can create shaped hot zones. The energy may be from any source provided that it can be shaped, directed and can heat the film to become molten and recrystallized by liquid phase epitaxy. The hot zone created by the heat source is shaped such that the angle defined by the scanned hot zone's trailing liquid edge is smaller than the angle defined by the intersection of the crystal's slowest growth planes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.