Method for doping tin oxide
US4707346A · kind A · utility
15Cited by
8References
1Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 21, 1986 |
| Grant date | Nov 17, 1987 |
| Priority date | — |
| Expiry date | Apr 21, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01C17/06533
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention is directed primarily to a method of doping tin oxide with Ta.sub.2 O.sub.5 and/or Nb.sub.2 O.sub.5 using pyrochlore-related compounds derived from the system SnO--SnO.sub.2 --Ta.sub.2 O.sub.5 --Nb.sub.2 O.sub.5 for use in thick film resistor compositions. The invention is also directed to thick film resistors containing the above-described pyrochlore-related compounds and to various compositions and methods for making such thick film resistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.