Semiconductor memory device with shortened time period of word line selection
US4707809A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 12, 1985 |
| Grant date | Nov 17, 1987 |
| Priority date | — |
| Expiry date | Jul 12, 2005 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device in which the selected word line is energized only during a limited period of time is disclosed. The memory device is equipped with a clock generator which generates a one-shot pulse signal in response to a change in address signal or to an application of a write-enable signal, and the selected word line is energized by the one-shot clock signal. The clock generator further generates a one-shot clock signal in response to a change in an input data signal in a data-write operation. The input data is thereby sorted into the accessed memory cell, even when the data to be stored is supplied a relatively long time after the write-enable signal is applied.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.