Low temperature deposition of silicon oxides for device fabrication

US4708884A · kind A · utility

Assignee

• American Telephone and Telegraph Company, AT&T Bell Laboratories · US

Inventors

• Edwin Arthur Chandross · New Providence, US
• Robert E. Dean · Rexford, US
• Patrick K. Gallagher · Berkeley Heights, US
• Roland A. Levy · Berkeley Heights, US
• Frank Schrey · Neshanic Station, US
• Gerald Smolinsky · Madison, US

Key dates

• Filing date: Jun 18, 1986
• Grant date: Nov 24, 1987
• Expiry date: Jun 18, 2006

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02274
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Conformal layers of a silicon oxide, such as silicon dioxide, are deposited at temperatures below 600 degrees C. through the decomposition of compounds such as diacetoxyditertiarybutoxysilane. The required temperatures do not significantly affect temperature-sensitive structures. Therefore, it is possible to form silicon oxide regions in the processing of devices having these structures. More generally, lowered-temperature processing can be applied to the deposition of other materials which include silicon oxide. For example, borophosphosilicate glasses can be deposited by chemical vapor deposition processing involving flash-evaporation of a mixture of liquid precursor reagents.