Chemical vapor deposition apparatus
US4709655A · kind A · utility
88Cited by
47References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 3, 1985 |
| Grant date | Dec 1, 1987 |
| Priority date | — |
| Expiry date | Dec 3, 2005 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/54
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A chemical vapor deposition apparatus includes a gas mixing chamber and a water-cooled reaction chamber with adjustable water-cooled baffle between them. A wafer is clamped face down to a chuck and an inert gas such as helium is forced between the chuck and the wafer to insure proper heat conduction from chuck to wafer. The chuck can be radiantly heated from above and operated in a plasma-enhanced mode. A wafer loading apparatus driven by a computer is isolated by a loadlock during deposition to enhance cleanliness. The chamber can be plasma cleaned to reduce downtime.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.