Semiconductor device and manufacturing method thereof
US4710398A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 1986 |
| Grant date | Dec 1, 1987 |
| Priority date | — |
| Expiry date | Aug 26, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device. An insulation film having an opening is formed on a semiconductor substrate. The opening is filled with an electrically conductive material so as to substantially flatten the top surface of the opening filled with an electrically conductive material, an intermediate layer of an electrically conductive material having a greater allowable current density than that of a wiring layer to be formed thereon is formed so as to cover at least their surface of the electrically condictive material deposited in the opening. Subsequently, the wiring layer is formed so as to extend from the surface of the intermediate layer onto the surface of the insulation film. A semiconductor device incorporating the wiring layer having an extremely high reliability can be easily realized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.