Heterojunction p-i-n photovoltaic cell
US4710589A · kind A · utility
35Cited by
5References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 21, 1986 |
| Grant date | Dec 1, 1987 |
| Priority date | — |
| Expiry date | Oct 21, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
A heterojunction p-i-n photovoltaic cell having at least three different semiconductor layers formed of at least four different elements comprises a p-type relatively wide band gap semiconductor layer, a high resistivity intrinsic semiconductor layer, used as an absorber of light radiation, and an n-type relatively wide band gap semiconductor layer. The intrinsic layer is in electrically conductive contact on one side with the p-type layer and on an opposite side with the n-type layer. First and second ohmic contacts are in electrically conductive contact with the p-type layer and the n-type layer, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.