Semiconductor including signal processor and transient detector for low temperature operation
US4710648A · kind A · utility
28Cited by
5References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 6, 1985 |
| Grant date | Dec 1, 1987 |
| Priority date | — |
| Expiry date | May 6, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/85
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Electric charge is supplied to a circuit node being in a charge storing state within a signal processor in response to a signal-processing commencing signal. The processor is operated in a low-temperature range, for example, in the range of temperature below 200K. By this structure, a leakage current is reduced, a high degree of integration equivalent to that of a dynamic circuit can be obtained, and the simplicity of a static circuit not requiring any complicated internal/external timing signals can be realized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.