Modulation doped field effect transistor with doped Si.sub.x Ge.sub.1-x -intrinsic Si layering

US4710788A · kind A · utility

Assignee

• Licentia Patent-Verwaltungs-GmbH · DE

Inventors

• Heinrich Dambkes · Ulm, DE
• Hans-Joest Herzog · Neu-Ulm, DE
• Helmut Jorke · Gerstetten, DE

Key dates

• Filing date: Dec 1, 1986
• Grant date: Dec 1, 1987
• Expiry date: Dec 1, 2006

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/64

Abstract

A modulation doped field effect transistor (MODFET) having an n-conductive channel. This channel is produced by a heterostructure formed on a silicon substrate and composed of a modulation doped Si.sub.1-x Ge.sub.x layer as well as an undoped Si layer.